NPN-Transistor 2SB1470, 8A, TO-264 ( TOP-3L ), TOP-3L, 160V. Collector current: 8A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Collector/emitter voltage Vceo: 160V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Darlington transistor?: yes. FT: 20 MHz. Function: Optimum for 120W Hi-Fi output. Ic(pulse): 15A. Max hFE gain: 20000. Minimum hFE gain: 3500. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Quantity per case: 2. RoHS: yes. Saturation voltage VCE(sat): 3V. Semiconductor material: silicon. Technology: 'Triple diffusion planar type darlington'. Temperature: +150°C. Tf(max): 1.2us. Tf(min): 1.2us. Type of transistor: PNP. Vcbo: 160V. Vebo: 5V. Original product from manufacturer: Panasonic. Quantity in stock updated on 10/31/2025, 09:09