NPN-Transistor 2SA881, D8A/C, 40V/32V, 1A, 1A, 40V

NPN-Transistor 2SA881, D8A/C, 40V/32V, 1A, 1A, 40V

Quantity
Unit price
1-4
0.62$
5-49
0.47$
50-99
0.43$
100+
0.42$
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Obsolete product, soon to be removed from the catalog. Last items available
Quantity in stock: 8

NPN-Transistor 2SA881, D8A/C, 40V/32V, 1A, 1A, 40V. Housing: D8A/C. Housing (JEDEC standard): -. Collector-emitter voltage Uceo [V]: 40V/32V. Collector current Ic [A], max.: 1A. Collector current: 1A. Collector/emitter voltage Vceo: 40V. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: -. FT: 150 MHz. Function: general purpose. Manufacturer's marking: -. Max temperature: -.. Maximum dissipation Ptot [W]: 0.6W. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Quantity per case: 1. RoHS: no. Semiconductor material: silicon. Type of transistor: PNP. Original product from manufacturer: Matsushita. Quantity in stock updated on 10/31/2025, 07:35

Technical documentation (PDF)
2SA881
17 parameters
Housing
D8A/C
Collector-emitter voltage Uceo [V]
40V/32V
Collector current Ic [A], max.
1A
Collector current
1A
Collector/emitter voltage Vceo
40V
Component family
PNP bipolar transistor
Configuration
PCB through-hole mounting
FT
150 MHz
Function
general purpose
Maximum dissipation Ptot [W]
0.6W
Number of terminals
3
Pd (Power Dissipation, Max)
0.6W
Quantity per case
1
RoHS
no
Semiconductor material
silicon
Type of transistor
PNP
Original product from manufacturer
Matsushita