NPN-Transistor 2SA1941-TOS, 10A, TO-3PN ( 2-16C1B ), 2-16C1A, 140V. Collector current: 10A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1A. Collector/emitter voltage Vceo: 140V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 320pF. FT: 30 MHz. Function: HI-FI Power Amplifier. Marking on the case: A1941. Max hFE gain: 160. Minimum hFE gain: 80. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 100W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.8V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SC5198. Temperature: +150°C. Type of transistor: PNP. Vcbo: 140V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 07:35