NPN-Transistor 2SA1358Y, 1A, TO-126F, TO-126F (2-8A1H), 120V. Collector current: 1A. Housing: TO-126F. Housing (according to data sheet): TO-126F (2-8A1H). Collector/emitter voltage Vceo: 120V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 30pF. FT: 120 MHz. Max hFE gain: 240. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 120. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 10W. Quantity per case: 1. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SC3421Y. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Vcbo: 120V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 07:35