NPN-Transistor 2SA1213Y, 2A, SOT-89, 2-5K1A, 50V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): 2-5K1A. Collector/emitter voltage Vceo: 50V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 40pF. FT: 120 MHz. Marking on the case: NY. Max hFE gain: 240. Maximum saturation voltage VCE(sat): 0.5V. Minimum hFE gain: 120. Pd (Power Dissipation, Max): 0.5W. Quantity per case: 1. Semiconductor material: silicon. Spec info: screen printing / SMD code NY. Type of transistor: PNP. Vcbo: 50V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 07:35