NPN-Transistor 2SA1145, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V

NPN-Transistor 2SA1145, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V

Quantity
Unit price
1-4
1.22$
5-24
1.06$
25-49
0.99$
50-99
0.91$
100+
0.78$
Obsolete product, soon to be removed from the catalog. Last items available
Quantity in stock: 16

NPN-Transistor 2SA1145, 50mA, TO-92, TO-92MOD ( 2-5J1A ), 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 150V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. FT: 200 MHz. Function: audio amplifier. Marking on the case: A1145 O. Max hFE gain: 160. Minimum hFE gain: 80. Note: 9mm. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SC2705. Technology: 'Epitaxial Type (PCT Process)'. Temperature: +150°C. Type of transistor: PNP. Vcbo: 150V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 07:35

Technical documentation (PDF)
2SA1145
26 parameters
Collector current
50mA
Housing
TO-92
Housing (according to data sheet)
TO-92MOD ( 2-5J1A )
Collector/emitter voltage Vceo
150V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
FT
200 MHz
Function
audio amplifier
Marking on the case
A1145 O
Max hFE gain
160
Minimum hFE gain
80
Note
9mm
Number of terminals
3
Pd (Power Dissipation, Max)
0.8W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SC2705
Technology
'Epitaxial Type (PCT Process)'
Temperature
+150°C
Type of transistor
PNP
Vcbo
150V
Vebo
5V
Original product from manufacturer
Toshiba