NPN-Transistor 2SA1123, 50mA, TO-92, TO-92, 150V

NPN-Transistor 2SA1123, 50mA, TO-92, TO-92, 150V

Quantity
Unit price
1-4
0.95$
5-24
0.78$
25-49
0.65$
50-99
0.58$
100+
0.48$
Quantity in stock: 3

NPN-Transistor 2SA1123, 50mA, TO-92, TO-92, 150V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 150V. Assembly/installation: PCB through-hole mounting. FT: 200 MHz. Ic(pulse): 100mA. Marking on the case: A1123. Max hFE gain: 220. Minimum hFE gain: 130. Number of terminals: 3. Pd (Power Dissipation, Max): 0.75W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Technology: 'Epitaxial planer type'. Temperature: +150°C. Type of transistor: PNP. Vcbo: 150V. Vebo: 5V. Original product from manufacturer: Panasonic. Quantity in stock updated on 10/31/2025, 07:35

Technical documentation (PDF)
2SA1123
22 parameters
Collector current
50mA
Housing
TO-92
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
150V
Assembly/installation
PCB through-hole mounting
FT
200 MHz
Ic(pulse)
100mA
Marking on the case
A1123
Max hFE gain
220
Minimum hFE gain
130
Number of terminals
3
Pd (Power Dissipation, Max)
0.75W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1V
Semiconductor material
silicon
Technology
'Epitaxial planer type'
Temperature
+150°C
Type of transistor
PNP
Vcbo
150V
Vebo
5V
Original product from manufacturer
Panasonic