| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
NPN-Transistor 2N6520, -350V, 0.5A, TO-92, TO-92, 350V
Quantity
Unit price
10-49
0.0834$
50-99
0.0726$
100-199
0.0655$
200+
0.0554$
| +4071 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Equivalence available | |
| Quantity in stock: 155 |
NPN-Transistor 2N6520, -350V, 0.5A, TO-92, TO-92, 350V. Collector-Emitter Voltage VCEO: -350V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 350V. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 100pF. CE diode: no. Cost): 6pF. FT: 200 MHz. Function: -. Max frequency: 40MHz. Max hFE gain: 200. Maximum saturation voltage VCE(sat): 1V. Minimum hFE gain: 15. Pd (Power Dissipation, Max): 0.625W. Polarity: PNP. Power: 0.63W. Quantity per case: 1. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2N6517. Type of transistor: PNP. Vcbo: 350V. Vebo: 5V. Original product from manufacturer: Cdil. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 01:37
2N6520
27 parameters
Collector-Emitter Voltage VCEO
-350V
Collector current
0.5A
Housing
TO-92
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
350V
Assembly/installation
PCB through-hole mounting
BE diode
no
C(in)
100pF
CE diode
no
Cost)
6pF
FT
200 MHz
Max frequency
40MHz
Max hFE gain
200
Maximum saturation voltage VCE(sat)
1V
Minimum hFE gain
15
Pd (Power Dissipation, Max)
0.625W
Polarity
PNP
Power
0.63W
Quantity per case
1
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2N6517
Type of transistor
PNP
Vcbo
350V
Vebo
5V
Original product from manufacturer
Cdil
Minimum quantity
10