NPN transistor 2N5886, 25A, TO-3 ( TO-204 ), TO-3, 80V. Collector current: 25A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 500pF. FT: 4 MHz. Ic(pulse): 50A. Max hFE gain: 100. Minimum hFE gain: 20. Number of terminals: 2. Operating temperature: -65...+200°C. Pd (Power Dissipation, Max): 200W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2N5884. Temperature: +200°C. Tf(max): 0.8us. Tf(min): 0.8us. Type of transistor: NPN. Vcbo: 80V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 07:27