NPN-Transistor 2N5415, 1A, TO-39 ( TO-205 ), TO-39, 200V
Quantity
Unit price
1-4
0.89$
5-24
0.76$
25-49
0.66$
50-99
0.57$
100+
0.46$
| Quantity in stock: 47 |
NPN-Transistor 2N5415, 1A, TO-39 ( TO-205 ), TO-39, 200V. Collector current: 1A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 200V. Assembly/installation: PCB through-hole mounting. BE diode: no. C(in): 75pF. CE diode: no. Cost): 15pF. FT: 15 MHz. Max hFE gain: 150. Minimum hFE gain: 30. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 2.5V. Semiconductor material: silicon. Temperature: +200°C. Type of transistor: PNP. Vcbo: 200V. Vebo: 4 v. Original product from manufacturer: Cdil. Quantity in stock updated on 10/31/2025, 07:27
2N5415
23 parameters
Collector current
1A
Housing
TO-39 ( TO-205 )
Housing (according to data sheet)
TO-39
Collector/emitter voltage Vceo
200V
Assembly/installation
PCB through-hole mounting
BE diode
no
C(in)
75pF
CE diode
no
Cost)
15pF
FT
15 MHz
Max hFE gain
150
Minimum hFE gain
30
Number of terminals
3
Pd (Power Dissipation, Max)
1W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
2.5V
Semiconductor material
silicon
Temperature
+200°C
Type of transistor
PNP
Vcbo
200V
Vebo
4 v
Original product from manufacturer
Cdil