NPN transistor 2N5109, 0.4A, TO-39 ( TO-205 ), TO-39, 20V. Collector current: 0.4A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 20V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. FT: 1.2GHz. Max hFE gain: 210. Minimum hFE gain: 70. Number of terminals: 3. Operating temperature: -65...+200°C. Pd (Power Dissipation, Max): 1W. Quantity per case: 1. Saturation voltage VCE(sat): 0.5V. Semiconductor material: silicon. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Vcbo: 40V. Vebo: 3V. Original product from manufacturer: Sgs. Quantity in stock updated on 10/31/2025, 07:27