N-channel transistor ZXMN7A11GTA, 3A, 3.8A, 1uA, 0.13 Ohms, SOT-223 ( TO-226 ), SOT-223, 70V. ID (T=100°C): 3A. ID (T=25°C): 3.8A. Idss (max): 1uA. On-resistance Rds On: 0.13 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 70V. Assembly/installation: surface-mounted component (SMD). C(in): 298pF. Channel type: N. Cost): 35pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 0uA. Id(imp): 10A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 2W. Quantity per case: 1. RoHS: yes. Td(off): 11.5 ns. Td(on): 1.9 ns. Technology: 'Enhancement Mode MOSFET'. Trr Diode (Min.): -. Type of transistor: MOSFET. Vgs(th) max.: -. Vgs(th) min.: 1V. Original product from manufacturer: Diodes Inc. Quantity in stock updated on 10/31/2025, 09:51