N-channel transistor VNP35N07, TO-220, Internally limited, 200uA, 70V, 0.028 Ohms, TO-220AB, 70V. Housing: TO-220. Housing (JEDEC standard): -. ID (T=25°C): Internally limited. Idss (max): 200uA. Drain-source voltage Uds [V]: 70V. On-resistance Rds On: 0.028 Ohms. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 70V. Channel type: N. Ciss Gate Capacitance [pF]: -. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 980pF. Drain current Id (A) @ 25°C: 35A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms @ 18A. Drain-source protection: yes. Function: 'Fully autoprotected driver switch'. Gate breakdown voltage Ugs [V]: 3V. IDss (min): 50uA. Manufacturer's marking: VNP35N07. Max temperature: +135°C.. Maximum dissipation Ptot [W]: 125W. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. RoHS: yes. Spec info: Linear Current Limitation. Switch-off delay tf[nsec.]: 1000 ns. Switch-on time ton [nsec.]: 200 ns. Td(off): 650 ns. Td(on): 100 ns. Technology: OMNIFET. Type of transistor: MOSFET. Used for: Ilim= 35A IR= -50A. Vin input voltage (max): 18V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 09:51