N-channel transistor VNP10N07, TO-220, 70V, 10A, 200uA, 0.10 Ohms, TO-220, 70V. Housing: TO-220. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 70V. ID (T=25°C): 10A. Idss (max): 200uA. On-resistance Rds On: 0.10 Ohms. Housing (according to data sheet): TO-220. Voltage Vds(max): 70V. Assembly/installation: PCB through-hole mounting. Channel type: N. Ciss Gate Capacitance [pF]: -. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 350pF. Drain current Id (A) @ 25°C: 10A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ 5A. Drain-source protection: zener diode. Function: Full Autoprotected Power MOSFET. G-S Protection: zener diode. Gate breakdown voltage Ugs [V]: 3V. IDss (min): 50uA. IGF: 50mA. Id(imp): 14A. Manufacturer's marking: VNP10N07-E. Max temperature: +135°C.. Maximum dissipation Ptot [W]: 50W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 50W. Quantity per case: 1. RoHS: yes. Spec info: Linear Current Limitation. Switch-off delay tf[nsec.]: 900ns. Switch-on time ton [nsec.]: 100 ns. Td(off): 230 ns. Td(on): 50 ns. Technology: OMNIFET. Trr Diode (Min.): 125 ns. Type of transistor: MOSFET. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 09:51