N-channel transistor VNB35N07E, D²-PAK, TO-263, 70V. Housing: D²-PAK. Housing (JEDEC standard): TO-263. Drain-source voltage Uds [V]: 70V. Ciss Gate Capacitance [pF]: -. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 35A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.028 Ohms @ 18A. Gate breakdown voltage Ugs [V]: 3V. Manufacturer's marking: VNB35N07-E. Max temperature: +135°C.. Maximum dissipation Ptot [W]: 125W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 800 ns. Switch-on time ton [nsec.]: 200 ns. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/02/2025, 19:02