N-channel transistor TSM9926DCSRLG, SO8, 20V
Quantity
Unit price
1+
1.12$
| Quantity in stock: 164 |
N-channel transistor TSM9926DCSRLG, SO8, 20V. Housing: SO8. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 20V. Ciss Gate Capacitance [pF]: 562pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.021 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 0.6V. Manufacturer's marking: -. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 1.6W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 21.8 ns. Switch-on time ton [nsec.]: 8.1 ns. Original product from manufacturer: Taiwan Semiconductor. Quantity in stock updated on 11/02/2025, 20:19
TSM9926DCSRLG
15 parameters
Housing
SO8
Drain-source voltage Uds [V]
20V
Ciss Gate Capacitance [pF]
562pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-6A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.021 Ohms @ 6A
Gate breakdown voltage Ugs [V]
0.6V
Max temperature
+150°C.
Maximum dissipation Ptot [W]
1.6W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
21.8 ns
Switch-on time ton [nsec.]
8.1 ns
Original product from manufacturer
Taiwan Semiconductor