N-channel transistor TSM048NB06LCR-RLG, PDFN56, 60V
Quantity
Unit price
1+
6.74$
| Quantity in stock: 40 |
N-channel transistor TSM048NB06LCR-RLG, PDFN56, 60V. Housing: PDFN56. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. Ciss Gate Capacitance [pF]: 6253pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 107A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0048 Ohm @ 16A. Gate breakdown voltage Ugs [V]: 2.5V. Manufacturer's marking: -. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 136W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 78 ns. Switch-on time ton [nsec.]: 4 ns. Original product from manufacturer: Taiwan Semiconductor. Quantity in stock updated on 11/02/2025, 22:52
TSM048NB06LCR-RLG
15 parameters
Housing
PDFN56
Drain-source voltage Uds [V]
60V
Ciss Gate Capacitance [pF]
6253pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
107A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.0048 Ohm @ 16A
Gate breakdown voltage Ugs [V]
2.5V
Max temperature
+175°C.
Maximum dissipation Ptot [W]
136W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
78 ns
Switch-on time ton [nsec.]
4 ns
Original product from manufacturer
Taiwan Semiconductor