N-channel transistor TSM045NB06CR-RLG, PDFN56, 60V
Quantity
Unit price
1+
7.31$
| Quantity in stock: 50 |
N-channel transistor TSM045NB06CR-RLG, PDFN56, 60V. Housing: PDFN56. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. Ciss Gate Capacitance [pF]: 6870pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 104A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.005 Ohm @ 16A. Gate breakdown voltage Ugs [V]: 4 v. Manufacturer's marking: -. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 136W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 56 ns. Switch-on time ton [nsec.]: 8 ns. Original product from manufacturer: Taiwan Semiconductor. Quantity in stock updated on 11/02/2025, 22:52
TSM045NB06CR-RLG
15 parameters
Housing
PDFN56
Drain-source voltage Uds [V]
60V
Ciss Gate Capacitance [pF]
6870pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
104A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.005 Ohm @ 16A
Gate breakdown voltage Ugs [V]
4 v
Max temperature
+175°C.
Maximum dissipation Ptot [W]
136W
Number of terminals
8
RoHS
yes
Switch-off delay tf[nsec.]
56 ns
Switch-on time ton [nsec.]
8 ns
Original product from manufacturer
Taiwan Semiconductor