N-channel transistor TSM025NB04LCR, PDFN56, 40V. Housing: PDFN56. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 40V. Ciss Gate Capacitance [pF]: 6435pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 161A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.0025 Ohm @ 24A. Gate breakdown voltage Ugs [V]: 2.5V. Manufacturer's marking: -. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 136W. Number of terminals: 8. RoHS: yes. Switch-off delay tf[nsec.]: 75 ns. Switch-on time ton [nsec.]: 4 ns. Original product from manufacturer: Taiwan Semiconductor. Quantity in stock updated on 11/02/2025, 22:52