N-channel transistor TK8A65D-STA4-Q-M, 10uA, 0.7 Ohms, TO-220FP, 2-10U1B, 650V

N-channel transistor TK8A65D-STA4-Q-M, 10uA, 0.7 Ohms, TO-220FP, 2-10U1B, 650V

Quantity
Unit price
1-4
4.57$
5-9
3.88$
10-24
3.64$
25-49
3.40$
50+
3.08$
Equivalence available
Quantity in stock: 75

N-channel transistor TK8A65D-STA4-Q-M, 10uA, 0.7 Ohms, TO-220FP, 2-10U1B, 650V. Idss (max): 10uA. On-resistance Rds On: 0.7 Ohms. Housing: TO-220FP. Housing (according to data sheet): 2-10U1B. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. C(in): 1350pF. Channel type: N. Cost): 135pF. Drain-source protection: yes. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): -. Id(imp): 30Ap. Marking on the case: K8A65D. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 45W. Quantity per case: 1. RoHS: yes. Td(off): 75 ns. Td(on): 60 ns. Technology: Field Effect (TT-MOSVII). Type of transistor: MOSFET. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:51

TK8A65D-STA4-Q-M
25 parameters
Idss (max)
10uA
On-resistance Rds On
0.7 Ohms
Housing
TO-220FP
Housing (according to data sheet)
2-10U1B
Voltage Vds(max)
650V
Assembly/installation
PCB through-hole mounting
C(in)
1350pF
Channel type
N
Cost)
135pF
Drain-source protection
yes
Function
Switching Mode Power Supplies (SMPS)
G-S Protection
no
Gate/source voltage Vgs
30 v
Id(imp)
30Ap
Marking on the case
K8A65D
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
45W
Quantity per case
1
RoHS
yes
Td(off)
75 ns
Td(on)
60 ns
Technology
Field Effect (TT-MOSVII)
Type of transistor
MOSFET
Original product from manufacturer
Toshiba

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