N-channel transistor TK6A65D, 6A, 10uA, 0.95 Ohms, TO-220FP, TO-220F, 650V. ID (T=25°C): 6A. Idss (max): 10uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. C(in): 1050pF. Channel type: N. Cost): 100pF. Drain-source protection: yes. Function: Switching Regulator. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 24A. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Quantity per case: 1. RoHS: yes. Td(off): 75 ns. Td(on): 60 ns. Technology: Field Effect Transistor. Temperature: +150°C. Trr Diode (Min.): 1300 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:51