N-channel transistor TK6A60D, 6A, 10uA, 1 Ohm, TO-220FP, TO-220F, 600V. ID (T=25°C): 6A. Idss (max): 10uA. On-resistance Rds On: 1 Ohm. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 800pF. Channel type: N. Cost): 100pF. Drain-source protection: diode. Function: Switching Mode Power Supplies (SMPS). G-S Protection: no. Gate/source voltage Vgs: 30 v. Id(imp): 24A. Marking on the case: K6A60D. Number of terminals: 3. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 40W. Quantity per case: 1. RoHS: yes. Td(off): 60 ns. Td(on): 40 ns. Technology: Field Effect (TT-MOSVI). Temperature: +150°C. Trr Diode (Min.): 1200 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:51