N-channel transistor TIG056BF-1E, TO-220FP, TO-220F-3FS, 430V. Housing: TO-220FP. Housing (according to data sheet): TO-220F-3FS. Collector/emitter voltage Vceo: 430V. Assembly/installation: PCB through-hole mounting. C(in): 5500pF. CE diode: no. Channel type: N. Collector current: 240A. Cost): 100pF. Function: Low-saturation voltage, Ultra high speed switching. Gate/emitter voltage VGE(th) min.: 2.5V. Gate/emitter voltage VGE(th)max.: 5V. Gate/emitter voltage VGE: 33V. Germanium diode: Suppressor. Ic(pulse): 240A. Maximum saturation voltage VCE(sat): 5V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Saturation voltage VCE(sat): 3.6V. Spec info: High speed hall time--tf=270nS(typ). Td(off): 140 ns. Td(on): 46 ns. Technology: Enhancement type. Various: flash, stroboscope control. Original product from manufacturer: ON Semiconductor. Quantity in stock updated on 10/31/2025, 09:51