N-channel transistor SUP85N03-3M6P, 85A, 85A, 250uA, 0.003 Ohms, TO-220, TO-220AB, 30 v

N-channel transistor SUP85N03-3M6P, 85A, 85A, 250uA, 0.003 Ohms, TO-220, TO-220AB, 30 v

Quantity
Unit price
1-4
2.84$
5-24
2.47$
25-49
2.21$
50+
1.94$
Quantity in stock: 498

N-channel transistor SUP85N03-3M6P, 85A, 85A, 250uA, 0.003 Ohms, TO-220, TO-220AB, 30 v. ID (T=100°C): 85A. ID (T=25°C): 85A. Idss (max): 250uA. On-resistance Rds On: 0.003 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 30 v. Assembly/installation: PCB through-hole mounting. C(in): 3535pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 680pF. Drain-source protection: diode. Function: Power Supply, DC/DC Converter. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 60.4k Ohms. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 78W. Quantity per case: 1. RoHS: yes. Spec info: (D-S) 150°C MOSFET. Td(off): 35 ns. Td(on): 11 ns. Technology: TrenchFET® Power MOSFET. Trr Diode (Min.): 41 ns. Type of transistor: MOSFET. Vgs(th) min.: 1V. Original product from manufacturer: Vishay. Quantity in stock updated on 10/31/2025, 09:51

Technical documentation (PDF)
SUP85N03-3M6P
32 parameters
ID (T=100°C)
85A
ID (T=25°C)
85A
Idss (max)
250uA
On-resistance Rds On
0.003 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
30 v
Assembly/installation
PCB through-hole mounting
C(in)
3535pF
Channel type
N
Conditioning unit
50
Conditioning
plastic tube
Cost)
680pF
Drain-source protection
diode
Function
Power Supply, DC/DC Converter
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
60.4k Ohms
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
78W
Quantity per case
1
RoHS
yes
Spec info
(D-S) 150°C MOSFET
Td(off)
35 ns
Td(on)
11 ns
Technology
TrenchFET® Power MOSFET
Trr Diode (Min.)
41 ns
Type of transistor
MOSFET
Vgs(th) min.
1V
Original product from manufacturer
Vishay