N-channel transistor STW43NM60ND, 22A, 35A, 100uA, 0.075 Ohms, TO-247, TO-247, 600V

N-channel transistor STW43NM60ND, 22A, 35A, 100uA, 0.075 Ohms, TO-247, TO-247, 600V

Quantity
Unit price
1-4
15.25$
5-9
14.39$
10-19
12.84$
20+
11.91$
Obsolete product, soon to be removed from the catalog
Out of stock

N-channel transistor STW43NM60ND, 22A, 35A, 100uA, 0.075 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 22A. ID (T=25°C): 35A. Idss (max): 100uA. On-resistance Rds On: 0.075 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 4300pF. Channel type: N. Cost): 250pF. Drain-source protection: zener diode. Function: Low input capacitance and gate charge. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 10uA. Id(imp): 140A. Marking on the case: 43NM60ND. Number of terminals: 3. Pd (Power Dissipation, Max): 255W. Quantity per case: 1. RoHS: yes. Spec info: Low gate input resistance. Td(off): 120ns. Td(on): 30 ns. Technology: MDmesh II. Temperature: +150°C. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 09:51

Technical documentation (PDF)
STW43NM60ND
31 parameters
ID (T=100°C)
22A
ID (T=25°C)
35A
Idss (max)
100uA
On-resistance Rds On
0.075 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
4300pF
Channel type
N
Cost)
250pF
Drain-source protection
zener diode
Function
Low input capacitance and gate charge
G-S Protection
no
Gate/source voltage Vgs
25V
IDss (min)
10uA
Id(imp)
140A
Marking on the case
43NM60ND
Number of terminals
3
Pd (Power Dissipation, Max)
255W
Quantity per case
1
RoHS
yes
Spec info
Low gate input resistance
Td(off)
120ns
Td(on)
30 ns
Technology
MDmesh II
Temperature
+150°C
Trr Diode (Min.)
190 ns
Type of transistor
MOSFET
Vgs(th) min.
3V
Original product from manufacturer
Stmicroelectronics