N-channel transistor STW28N65M2, 13A, 20A, 100uA, 0.15 Ohms, TO-247, TO-247, 650V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.15 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 650V. Assembly/installation: PCB through-hole mounting. C(in): 1440pF. Channel type: N. Cost): 60pF. Drain-source protection: yes. Function: switching circuits. G-S Protection: yes. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 80A. Marking on the case: 28N65M2. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 170W. Quantity per case: 1. Td(off): 59 ns. Td(on): 13.4 ns. Technology: MDmesh™ M2 Power MOSFETs. Trr Diode (Min.): 384 ns. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 10/31/2025, 09:51