N-channel transistor STW26NM60N, 12.6A, 20A, 100uA, 0.135 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.135 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1800pF. Channel type: N. Conditioning unit: 30. Conditioning: plastic tube. Cost): 115pF. Drain-source protection: yes. Function: switching circuits. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 80A. Marking on the case: 26NM60N. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 140W. Quantity per case: 1. RoHS: yes. Spec info: Low input capacitance and gate charge. Td(off): 13 ns. Td(on): 85 ns. Technology: MDmesh PpwerMOSFET. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Weight: 4.51g. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58