N-channel transistor STW20NM60, 12.6A, 20A, 100uA, 0.26 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 100uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1450pF. Channel type: N. Cost): 350pF. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 80A. Marking on the case: W20NM60. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 214W. Quantity per case: 1. RoHS: yes. Td(off): 6 ns. Td(on): 25 ns. Technology: MDmesh PpwerMOSFET. Trr Diode (Min.): 510 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58