N-channel transistor STW18NM80, 10.71A, 17A, 100nA, 0.25 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 10.71A. ID (T=25°C): 17A. Idss (max): 100nA. On-resistance Rds On: 0.25 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 1630pF. Channel type: N. Conditioning unit: 30. Conditioning: plastic tube. Cost): 750pF. Drain-source protection: zener diode. Function: switching circuits. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10nA. Id(imp): 68A. Marking on the case: 18NM80. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. Quantity per case: 1. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Technology: MDmesh PpwerMOSFET. Temperature: +150°C. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58