N-channel transistor STW14NK50Z, TO-247, 500V, 7.6A, 14A, 50mA, 0.34 Ohms, TO-247, 500V

N-channel transistor STW14NK50Z, TO-247, 500V, 7.6A, 14A, 50mA, 0.34 Ohms, TO-247, 500V

Quantity
Unit price
1-4
2.79$
5-14
2.46$
15-29
2.16$
30-59
1.93$
60+
1.65$
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Quantity in stock: 51

N-channel transistor STW14NK50Z, TO-247, 500V, 7.6A, 14A, 50mA, 0.34 Ohms, TO-247, 500V. Housing: TO-247. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 500V. ID (T=100°C): 7.6A. ID (T=25°C): 14A. Idss (max): 50mA. On-resistance Rds On: 0.34 Ohms. Housing (according to data sheet): TO-247. Voltage Vds(max): 500V. Assembly/installation: PCB through-hole mounting. C(in): 2000pF. Channel type: N. Ciss Gate Capacitance [pF]: 2000pF. Component family: MOSFET, N-MOS. Conditioning unit: 30. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Cost): 238pF. Drain current Id (A) @ 25°C: 14A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.38 Ohms @ 6A. Drain-source protection: zener diode. Function: HIGH Current, HIGH Speed Switching. G-S Protection: yes. Gate breakdown voltage Ugs [V]: 4.5V. Gate/source voltage Vgs: 30 v. IDss (min): 1mA. Id(imp): 48A. Manufacturer's marking: W14NK50Z. Marking on the case: W14NK50Z. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 150W. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 150W. Quantity per case: 1. RoHS: yes. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Switch-off delay tf[nsec.]: 54 ns. Switch-on time ton [nsec.]: 24 ns. Td(off): 54 ns. Td(on): 24 ns. Technology: Zener-Protected SuperMESH Power MOSFET. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58

Technical documentation (PDF)
STW14NK50Z
47 parameters
Housing
TO-247
Drain-source voltage Uds [V]
500V
ID (T=100°C)
7.6A
ID (T=25°C)
14A
Idss (max)
50mA
On-resistance Rds On
0.34 Ohms
Housing (according to data sheet)
TO-247
Voltage Vds(max)
500V
Assembly/installation
PCB through-hole mounting
C(in)
2000pF
Channel type
N
Ciss Gate Capacitance [pF]
2000pF
Component family
MOSFET, N-MOS
Conditioning unit
30
Conditioning
plastic tube
Configuration
PCB through-hole mounting
Cost)
238pF
Drain current Id (A) @ 25°C
14A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.38 Ohms @ 6A
Drain-source protection
zener diode
Function
HIGH Current, HIGH Speed Switching
G-S Protection
yes
Gate breakdown voltage Ugs [V]
4.5V
Gate/source voltage Vgs
30 v
IDss (min)
1mA
Id(imp)
48A
Manufacturer's marking
W14NK50Z
Marking on the case
W14NK50Z
Max temperature
+150°C.
Maximum dissipation Ptot [W]
150W
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
150W
Quantity per case
1
RoHS
yes
Spec info
'EXTREMELY HIGH dv/dt CAPABILITY'
Switch-off delay tf[nsec.]
54 ns
Switch-on time ton [nsec.]
24 ns
Td(off)
54 ns
Td(on)
24 ns
Technology
Zener-Protected SuperMESH Power MOSFET
Trr Diode (Min.)
470 ns
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Vgs(th) min.
3V
Original product from manufacturer
Stmicroelectronics