N-channel transistor STW12NK80Z, 6.6A, 10.5A, 50uA, 0.65 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 6.6A. ID (T=25°C): 10.5A. Idss (max): 50uA. On-resistance Rds On: 0.65 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 2620pF. Channel type: N. Cost): 250pF. Drain-source protection: yes. Function: Improved ESD capability. G-S Protection: yes. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 42A. Marking on the case: W12NK80Z. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 190W. Quantity per case: 1. RoHS: yes. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Td(off): 70 ns. Td(on): 30 ns. Technology: SuperMESH™ power MOSFET transistor protected by zener diode. Trr Diode (Min.): 635 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58