N-channel transistor STW10NK80Z, 6A, 9A, 50uA, 0.78 Ohms, TO-247, TO-247, 800V

N-channel transistor STW10NK80Z, 6A, 9A, 50uA, 0.78 Ohms, TO-247, TO-247, 800V

Quantity
Unit price
1-4
3.89$
5-14
3.44$
15-29
3.11$
30+
2.81$
Quantity in stock: 14

N-channel transistor STW10NK80Z, 6A, 9A, 50uA, 0.78 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. On-resistance Rds On: 0.78 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 2180pF. Channel type: N. Cost): 205pF. Drain-source protection: zener diode. Function: protected with zener diode. G-S Protection: yes. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 36A. Marking on the case: W10NK80Z. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 160W. Quantity per case: 1. RoHS: yes. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58

Technical documentation (PDF)
STW10NK80Z
31 parameters
ID (T=100°C)
6A
ID (T=25°C)
9A
Idss (max)
50uA
On-resistance Rds On
0.78 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
2180pF
Channel type
N
Cost)
205pF
Drain-source protection
zener diode
Function
protected with zener diode
G-S Protection
yes
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
36A
Marking on the case
W10NK80Z
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
160W
Quantity per case
1
RoHS
yes
Td(off)
65 ns
Td(on)
30 ns
Technology
SuperMESH ™Power MOSFET
Trr Diode (Min.)
645 ns
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Vgs(th) min.
3V
Original product from manufacturer
Stmicroelectronics