N-channel transistor STW10NK60Z, 5.7A, 10A, 50uA, 0.65 Ohms, TO-247, TO-247, 600V

N-channel transistor STW10NK60Z, 5.7A, 10A, 50uA, 0.65 Ohms, TO-247, TO-247, 600V

Quantity
Unit price
1-4
3.00$
5-9
2.61$
10-24
2.20$
25+
1.99$
Quantity in stock: 16

N-channel transistor STW10NK60Z, 5.7A, 10A, 50uA, 0.65 Ohms, TO-247, TO-247, 600V. ID (T=100°C): 5.7A. ID (T=25°C): 10A. Idss (max): 50uA. On-resistance Rds On: 0.65 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1370pF. Channel type: N. Cost): 156pF. Drain-source protection: zener diode. Function: protected with zener diode. G-S Protection: yes. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 36A. Marking on the case: W10NK60Z. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 156W. Quantity per case: 1. RoHS: yes. Td(off): 55 ns. Td(on): 20 ns. Technology: SuperMESH ™Power MOSFET. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58

Technical documentation (PDF)
STW10NK60Z
31 parameters
ID (T=100°C)
5.7A
ID (T=25°C)
10A
Idss (max)
50uA
On-resistance Rds On
0.65 Ohms
Housing
TO-247
Housing (according to data sheet)
TO-247
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
1370pF
Channel type
N
Cost)
156pF
Drain-source protection
zener diode
Function
protected with zener diode
G-S Protection
yes
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
36A
Marking on the case
W10NK60Z
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
156W
Quantity per case
1
RoHS
yes
Td(off)
55 ns
Td(on)
20 ns
Technology
SuperMESH ™Power MOSFET
Trr Diode (Min.)
570 ns
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Vgs(th) min.
3V
Original product from manufacturer
Stmicroelectronics