N-channel transistor STQ1NK60ZR-AP, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V

N-channel transistor STQ1NK60ZR-AP, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V

Quantity
Unit price
1-4
0.80$
5-24
0.68$
25-99
0.58$
100-199
0.51$
200+
0.43$
Quantity in stock: 1926

N-channel transistor STQ1NK60ZR-AP, 0.189A, 0.3A, 50uA, 13 Ohms, TO-92, TO-92Ammopak, 600V. ID (T=100°C): 0.189A. ID (T=25°C): 0.3A. Idss (max): 50uA. On-resistance Rds On: 13 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92Ammopak. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 94pF. Channel type: N. Cost): 17.6pF. Drain-source protection: yes. Function: Zener-protected, ESD improved capability. G-S Protection: yes. Gate/emitter voltage VGE(th) min.: 3V. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 1.2A. Marking on the case: 1NK60ZR. Operating temperature: -50...+150°C. Pd (Power Dissipation, Max): 3W. Quantity per case: 1. RoHS: yes. Td(off): 13 ns. Td(on): 5.5 ns. Technology: SuperMESH™ Power MOSFET. Trr Diode (Min.): 135 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58

Technical documentation (PDF)
STQ1NK60ZR-AP
30 parameters
ID (T=100°C)
0.189A
ID (T=25°C)
0.3A
Idss (max)
50uA
On-resistance Rds On
13 Ohms
Housing
TO-92
Housing (according to data sheet)
TO-92Ammopak
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
94pF
Channel type
N
Cost)
17.6pF
Drain-source protection
yes
Function
Zener-protected, ESD improved capability
G-S Protection
yes
Gate/emitter voltage VGE(th) min.
3V
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
1.2A
Marking on the case
1NK60ZR
Operating temperature
-50...+150°C
Pd (Power Dissipation, Max)
3W
Quantity per case
1
RoHS
yes
Td(off)
13 ns
Td(on)
5.5 ns
Technology
SuperMESH™ Power MOSFET
Trr Diode (Min.)
135 ns
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Original product from manufacturer
Stmicroelectronics