N-channel transistor STP6NK60Z, 600V, 3.8A, 6A, TO-220, 50uA, 1 Ohm, TO-220, 600V. Vdss (Drain to Source Voltage): 600V. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Housing: TO-220. Idss (max): 50uA. On-resistance Rds On: 1 Ohm. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 905pF. Channel type: N. Cost): 115pF. Drain-source protection: yes. Drive Voltage: 10V. Features: -. Function: Zener-Protected, Power MOSFET transistor. G-S Protection: yes. Gate/source voltage Vgs max: -20V. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id @ Tc=25°C (Continuous Drain Current): 4A. Information: -. MSL: -. Marking on the case: P6NK60Z. Mounting Type: THT. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 104W. Polarity: MOSFET N. Quantity per case: 1. Rds On (Max) @ Id, Vgs: 2 Ohms / 2.8A / 10V. RoHS: yes. Series: SuperMESH. Td(off): 47 ns. Td(on): 14 ns. Technology: SuperMESH Power MOSFET. Trr Diode (Min.): 445 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58