N-channel transistor STP62NS04Z, 37.5A, 62A, 0.01mA, 62A, 12.5m Ohms, TO-220, TO-220, 33V. ID (T=100°C): 37.5A. ID (T=25°C): 62A. Idss: 0.01mA. Idss (max): 62A. On-resistance Rds On: 12.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 33V. Assembly/installation: PCB through-hole mounting. C(in): 1330pF. Channel type: N. Cost): 420pF. Drain-source protection: yes. Function: fully protected. G-S Protection: yes. Gate/source voltage (off) min.: 2V. Gate/source voltage Vgs: 10V. Id(imp): 248A. Marking on the case: P62NS04Z. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. Quantity per case: 1. RoHS: yes. Td(off): 41 ns. Td(on): 13 ns. Technology: MESH OVERLAY™ Power MOSFET. Trr Diode (Min.): 45 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 08:58