N-channel transistor STP60NF06L, TO-220, 60V, 42A, 60A, 10uA, 0.014 Ohms, TO-220, 60V. Housing: TO-220. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. ID (T=100°C): 42A. ID (T=25°C): 60A. Idss (max): 10uA. On-resistance Rds On: 0.014 Ohms. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 2000pF. Channel type: N. Ciss Gate Capacitance [pF]: 2000pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Cost): 360pF. Drain current Id (A) @ 25°C: 60A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 60A. Drain-source protection: yes. Function: low gate charge, VGS(th) 1...2.5V. G-S Protection: no. Gate breakdown voltage Ugs [V]: 4.5V. Gate/source voltage Vgs: 15V. IDss (min): 1uA. Id(imp): 240A. Manufacturer's marking: P60NF06L. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 150W. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 110W. Quantity per case: 1. RoHS: yes. Spec info: low gate charge, VGS(th) 1...2.5V. Switch-off delay tf[nsec.]: 55 ns. Switch-on time ton [nsec.]: 35 ns. Td(off): 55 ns. Td(on): 35 ns. Technology: STripFET II POWER MOSFET. Temperature: +240°C. Trr Diode (Min.): 110us. Type of transistor: MOSFET. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29