N-channel transistor STP5NK80Z, 800V, 2.7A, 4.3A, 50uA, 1.9 Ohms, TO-220, TO-220, 800V. Drain-source voltage (Vds): 800V. ID (T=100°C): 2.7A. ID (T=25°C): 4.3A. Idss (max): 50uA. On-resistance Rds On: 1.9 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 910pF. Channel type: N. Cost): 98pF. Drain-source protection: yes. Function: Zener-Protected, Power MOSFET transistor. G-S Protection: yes. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 17.2A. Marking on the case: P5NK80Z. Max drain current: 4.3A. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 110W. Power: 110W. Quantity per case: 1. Td(off): 45 ns. Td(on): 18 ns. Technology: SuperMESH Power MOSFET. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29