N-channel transistor STP4NB80, 2A, 4A, 50uA, 3 Ohms, 800V

N-channel transistor STP4NB80, 2A, 4A, 50uA, 3 Ohms, 800V

Quantity
Unit price
1-4
2.02$
5-49
1.80$
50-99
1.64$
100+
1.52$
Obsolete product, soon to be removed from the catalog
Out of stock

N-channel transistor STP4NB80, 2A, 4A, 50uA, 3 Ohms, 800V. ID (T=100°C): 2A. ID (T=25°C): 4A. Idss (max): 50uA. On-resistance Rds On: 3 Ohms. Voltage Vds(max): 800V. C(in): 700pF. Channel type: N. Cost): 95pF. Drain-source protection: yes. Function: HIGH Current, HIGH Speed Switching. G-S Protection: no. IDss (min): 1uA. Id(imp): 16A. Pd (Power Dissipation, Max): 100W. Quantity per case: 1. Td(off): 12 ns. Td(on): 14 ns. Technology: PowerMESH MOSFET. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29

Technical documentation (PDF)
STP4NB80
23 parameters
ID (T=100°C)
2A
ID (T=25°C)
4A
Idss (max)
50uA
On-resistance Rds On
3 Ohms
Voltage Vds(max)
800V
C(in)
700pF
Channel type
N
Cost)
95pF
Drain-source protection
yes
Function
HIGH Current, HIGH Speed Switching
G-S Protection
no
IDss (min)
1uA
Id(imp)
16A
Pd (Power Dissipation, Max)
100W
Quantity per case
1
Td(off)
12 ns
Td(on)
14 ns
Technology
PowerMESH MOSFET
Trr Diode (Min.)
600 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
Stmicroelectronics