N-channel transistor STP3NB60, 2.1A, 3.3A, 50uA, 3.3 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 50uA. On-resistance Rds On: 3.3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 400pF. Channel type: N. Cost): 57pF. Drain-source protection: yes. Function: HIGH Current, HIGH Speed Switching. G-S Protection: no. IDss (min): 1uA. Id(imp): 13.2A. Marking on the case: P3NB60. Pd (Power Dissipation, Max): 80W. Quantity per case: 1. Td(off): 11 ns. Td(on): 11 ns. Technology: PowerMESH™ MOSFET. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29