N-channel transistor STP20NM60FD, 12.6A, 20A, 10uA, 0.26 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 12.6A. ID (T=25°C): 20A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1300pF. Channel type: N. Cost): 500pF. Drain-source protection: yes. Function: Low Gate Capacitance. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 80A. Marking on the case: P20NM60FD. Number of terminals: 3. Pd (Power Dissipation, Max): 192W. Quantity per case: 1. RoHS: yes. Spec info: ID pulse 80A, HIGH dv/dt. Td(off): 8 ns. Td(on): 25 ns. Technology: FDmesh™ Power MOSFET (with fast diode). Temperature: +150°C. Trr Diode (Min.): 240 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29