N-channel transistor STP13NM60N, 6.93A, 11A, 100uA, 0.28 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 6.93A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 790pF. Channel type: N. Cost): 60pF. Drain-source protection: zener diode. Function: Low input capacitance and gate charge. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1uA. Id(imp): 44A. Marking on the case: 13NM60N. Number of terminals: 3. Pd (Power Dissipation, Max): 90W. Quantity per case: 1. RoHS: yes. Spec info: ID pulse 44A. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Temperature: +150°C. Trr Diode (Min.): 290 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29