N-channel transistor STP12NM50FP, 7.5A, 12A, 10uA, 0.3 Ohms, TO-220FP, TO-220FP, 550V

N-channel transistor STP12NM50FP, 7.5A, 12A, 10uA, 0.3 Ohms, TO-220FP, TO-220FP, 550V

Quantity
Unit price
1-4
3.83$
5-9
3.40$
10-24
3.13$
25-49
2.93$
50+
2.60$
Quantity in stock: 23

N-channel transistor STP12NM50FP, 7.5A, 12A, 10uA, 0.3 Ohms, TO-220FP, TO-220FP, 550V. ID (T=100°C): 7.5A. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.3 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 550V. Assembly/installation: PCB through-hole mounting. C(in): 1000pF. Channel type: N. Cost): 250pF. Drain-source protection: yes. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 48A. Marking on the case: P12NM50FP. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 35W. Quantity per case: 1. RoHS: yes. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29

Technical documentation (PDF)
STP12NM50FP
30 parameters
ID (T=100°C)
7.5A
ID (T=25°C)
12A
Idss (max)
10uA
On-resistance Rds On
0.3 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220FP
Voltage Vds(max)
550V
Assembly/installation
PCB through-hole mounting
C(in)
1000pF
Channel type
N
Cost)
250pF
Drain-source protection
yes
Function
HIGH dv/dt, Low Gate Capacitance
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
48A
Marking on the case
P12NM50FP
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
35W
Quantity per case
1
RoHS
yes
Td(on)
20 ns
Technology
MDmesh Power MOSFET
Trr Diode (Min.)
270 ns
Type of transistor
MOSFET
Vgs(th) max.
5V
Vgs(th) min.
3V
Original product from manufacturer
Stmicroelectronics