N-channel transistor STP11NM60, 7A, 11A, 10uA, 0.4 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1000pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 230pF. Drain-source protection: zener diode. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 44A. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. Quantity per case: 1. RoHS: yes. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Td(off): 6 ns. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Temperature: +150°C. Trr Diode (Min.): 390 ns. Type of transistor: MOSFET. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29