N-channel transistor STP10NK60Z, TO-220, 5.7A, 10A, 50uA, 0.75 Ohms, TO-220, 600V

N-channel transistor STP10NK60Z, TO-220, 5.7A, 10A, 50uA, 0.75 Ohms, TO-220, 600V

Quantity
Unit price
1-4
1.85$
5-24
1.56$
25-49
1.36$
50-99
1.24$
100+
1.07$
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Obsolete product, soon to be removed from the catalog
Out of stock

N-channel transistor STP10NK60Z, TO-220, 5.7A, 10A, 50uA, 0.75 Ohms, TO-220, 600V. Housing: TO-220. ID (T=100°C): 5.7A. ID (T=25°C): 10A. Idss (max): 50uA. On-resistance Rds On: 0.75 Ohms. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1370pF. Channel type: N. Conditioning: tubus. Cost): 156pF. Drain current: 5.7A. Drain-source protection: zener diode. Drain-source voltage: 600V. Function: Zener-Protected. G-S Protection: yes. Gate-source voltage: ±30V. Gate/source voltage Vgs: 30 v. IDss (min): 1uA. Id(imp): 36A. Marking on the case: P10NK60Z. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 115W. Polarity: unipolar. Power: 115W. Properties of semiconductor: ESD protected. Quantity per case: 1. RoHS: yes. Td(off): 18 ns. Td(on): 55 ns. Technology: Zener-Protected SuperMESH]Power MOSFET. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29

Technical documentation (PDF)
STP10NK60Z
38 parameters
Housing
TO-220
ID (T=100°C)
5.7A
ID (T=25°C)
10A
Idss (max)
50uA
On-resistance Rds On
0.75 Ohms
Housing (according to data sheet)
TO-220
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
1370pF
Channel type
N
Conditioning
tubus
Cost)
156pF
Drain current
5.7A
Drain-source protection
zener diode
Drain-source voltage
600V
Function
Zener-Protected
G-S Protection
yes
Gate-source voltage
±30V
Gate/source voltage Vgs
30 v
IDss (min)
1uA
Id(imp)
36A
Marking on the case
P10NK60Z
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
115W
Polarity
unipolar
Power
115W
Properties of semiconductor
ESD protected
Quantity per case
1
RoHS
yes
Td(off)
18 ns
Td(on)
55 ns
Technology
Zener-Protected SuperMESH]Power MOSFET
Trr Diode (Min.)
570 ns
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Vgs(th) min.
3V
Original product from manufacturer
Stmicroelectronics