N-channel transistor STP100N8F6, 70A, 100A, 100uA, 0.008 Ohms, TO-220, TO-220, 80V

N-channel transistor STP100N8F6, 70A, 100A, 100uA, 0.008 Ohms, TO-220, TO-220, 80V

Quantity
Unit price
1-4
3.16$
5-9
2.74$
10-24
2.47$
25-49
2.30$
50+
2.05$
Quantity in stock: 44

N-channel transistor STP100N8F6, 70A, 100A, 100uA, 0.008 Ohms, TO-220, TO-220, 80V. ID (T=100°C): 70A. ID (T=25°C): 100A. Idss (max): 100uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 80V. Assembly/installation: PCB through-hole mounting. C(in): 5955pF. Channel type: N. Cost): 244pF. Drain-source protection: yes. Function: switching circuits. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): -. Id(imp): 400A. Marking on the case: 100N8F6. Number of terminals: 3. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 176W. Quantity per case: 1. RoHS: yes. Td(off): 103 ns. Td(on): 33 ns. Technology: STripFET™ F6 technology. Trr Diode (Min.): 38 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29

Technical documentation (PDF)
STP100N8F6
30 parameters
ID (T=100°C)
70A
ID (T=25°C)
100A
Idss (max)
100uA
On-resistance Rds On
0.008 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220
Voltage Vds(max)
80V
Assembly/installation
PCB through-hole mounting
C(in)
5955pF
Channel type
N
Cost)
244pF
Drain-source protection
yes
Function
switching circuits
G-S Protection
no
Gate/source voltage Vgs
20V
Id(imp)
400A
Marking on the case
100N8F6
Number of terminals
3
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
176W
Quantity per case
1
RoHS
yes
Td(off)
103 ns
Td(on)
33 ns
Technology
STripFET™ F6 technology
Trr Diode (Min.)
38 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Stmicroelectronics