N-channel transistor STN4NF20L, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V

N-channel transistor STN4NF20L, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V

Quantity
Unit price
1-4
0.78$
5-24
0.65$
25-49
0.57$
50-99
0.51$
100+
0.43$
Quantity in stock: 141

N-channel transistor STN4NF20L, 630mA, 1A, 50uA, 1.1 Ohms, SOT-223 ( TO-226 ), SOT-223, 200V. ID (T=100°C): 630mA. ID (T=25°C): 1A. Idss (max): 50uA. On-resistance Rds On: 1.1 Ohms. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Voltage Vds(max): 200V. Assembly/installation: surface-mounted component (SMD). C(in): 150pF. Channel type: N. Cost): 30pF. Drain-source protection: yes. G-S Protection: no. Gate/source voltage Vgs: 20V. IDss (min): 1uA. Id(imp): 4A. Marking on the case: 4NF20L. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 3.3W. Quantity per case: 1. RoHS: yes. Td(off): 10.4 ns. Td(on): 2 ns. Type of transistor: MOSFET. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:29

Technical documentation (PDF)
STN4NF20L
25 parameters
ID (T=100°C)
630mA
ID (T=25°C)
1A
Idss (max)
50uA
On-resistance Rds On
1.1 Ohms
Housing
SOT-223 ( TO-226 )
Housing (according to data sheet)
SOT-223
Voltage Vds(max)
200V
Assembly/installation
surface-mounted component (SMD)
C(in)
150pF
Channel type
N
Cost)
30pF
Drain-source protection
yes
G-S Protection
no
Gate/source voltage Vgs
20V
IDss (min)
1uA
Id(imp)
4A
Marking on the case
4NF20L
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
3.3W
Quantity per case
1
RoHS
yes
Td(off)
10.4 ns
Td(on)
2 ns
Type of transistor
MOSFET
Original product from manufacturer
Stmicroelectronics