N-channel transistor STH8NA60FI, 3.2A, 5A, 250uA, 1.5 Ohms, ISOWATT218FX, ISOWATT218, 600V. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: ISOWATT218FX. Housing (according to data sheet): ISOWATT218. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1350pF. Channel type: N. Cost): 175pF. Drain-source protection: zener diode. Function: fast power MOSFET transistor. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 25uA. Id(imp): 32A. Marking on the case: H8NA60FI. Note: Viso 4000V. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. Quantity per case: 1. Td(off): 16 ns. Td(on): 20 ns. Technology: 'Enhancement mode'. Temperature: +150°C. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.75V. Vgs(th) min.: 2.25V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54