N-channel transistor STGW20NC60VD, 30A, TO-247, TO-247AC, 600V

N-channel transistor STGW20NC60VD, 30A, TO-247, TO-247AC, 600V

Quantity
Unit price
1-4
5.50$
5-14
4.87$
15-29
4.50$
30+
4.16$
Quantity in stock: 35

N-channel transistor STGW20NC60VD, 30A, TO-247, TO-247AC, 600V. Ic(T=100°C): 30A. Housing: TO-247. Housing (according to data sheet): TO-247AC. Collector/emitter voltage Vceo: 600V. Assembly/installation: PCB through-hole mounting. C(in): 2200pF. CE diode: yes. Channel type: N. Collector current: 60A. Cost): 225pF. Function: high frequency inverters, UPS. Gate/emitter voltage VGE(th) min.: 3.75V. Gate/emitter voltage VGE(th)max.: 5.75V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Ic(pulse): 150A. Marking on the case: GW20NC60VD. Maximum saturation voltage VCE(sat): 2.5V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 200W. RoHS: yes. Saturation voltage VCE(sat): 1.8V. Spec info: Very Fast PowerMESH™ IGBT. Td(off): 100 ns. Td(on): 31 ns. Trr Diode (Min.): 44 ns. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54

Technical documentation (PDF)
STGW20NC60VD
28 parameters
Ic(T=100°C)
30A
Housing
TO-247
Housing (according to data sheet)
TO-247AC
Collector/emitter voltage Vceo
600V
Assembly/installation
PCB through-hole mounting
C(in)
2200pF
CE diode
yes
Channel type
N
Collector current
60A
Cost)
225pF
Function
high frequency inverters, UPS
Gate/emitter voltage VGE(th) min.
3.75V
Gate/emitter voltage VGE(th)max.
5.75V
Gate/emitter voltage VGE
20V
Germanium diode
no
Ic(pulse)
150A
Marking on the case
GW20NC60VD
Maximum saturation voltage VCE(sat)
2.5V
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
200W
RoHS
yes
Saturation voltage VCE(sat)
1.8V
Spec info
Very Fast PowerMESH™ IGBT
Td(off)
100 ns
Td(on)
31 ns
Trr Diode (Min.)
44 ns
Original product from manufacturer
Stmicroelectronics