N-channel transistor STF9NM60N, 4A, 6.5A, 100mA, 0.63 Ohms, TO-220FP, TO-220FP, 600V

N-channel transistor STF9NM60N, 4A, 6.5A, 100mA, 0.63 Ohms, TO-220FP, TO-220FP, 600V

Quantity
Unit price
1-4
3.33$
5-24
2.89$
25-49
2.44$
50+
2.21$
Quantity in stock: 193

N-channel transistor STF9NM60N, 4A, 6.5A, 100mA, 0.63 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 4A. ID (T=25°C): 6.5A. Idss (max): 100mA. On-resistance Rds On: 0.63 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 452pF. Channel type: N. Cost): 30pF. Drain-source protection: zener diode. Function: Low input capacitance and gate charge. G-S Protection: no. Gate/source voltage Vgs: 25V. IDss (min): 1mA. Id(imp): 26A. Marking on the case: 9NM60N. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Quantity per case: 1. RoHS: yes. Spec info: ID pulse 26A. Td(off): 52.5 ns. Td(on): 28 ns. Technology: MDmesh™ II Power MOSFET. Temperature: +150°C. Trr Diode (Min.): 324 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54

STF9NM60N
32 parameters
ID (T=100°C)
4A
ID (T=25°C)
6.5A
Idss (max)
100mA
On-resistance Rds On
0.63 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220FP
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
452pF
Channel type
N
Cost)
30pF
Drain-source protection
zener diode
Function
Low input capacitance and gate charge
G-S Protection
no
Gate/source voltage Vgs
25V
IDss (min)
1mA
Id(imp)
26A
Marking on the case
9NM60N
Number of terminals
3
Pd (Power Dissipation, Max)
25W
Quantity per case
1
RoHS
yes
Spec info
ID pulse 26A
Td(off)
52.5 ns
Td(on)
28 ns
Technology
MDmesh™ II Power MOSFET
Temperature
+150°C
Trr Diode (Min.)
324 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
Stmicroelectronics